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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Anterwell Technology Ltd.

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Brand Name : Anterwell

Model Number : SGP02N120

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8300pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector-emitter voltage : 1200 V

DC collector current : 6.2 A

Pulsed collector current : 9.6 A

Gate-emitter voltage : ±20 V

Power dissipation : 62 W

Operating junction and storage temperature : -55...+150°C

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SGP02N120, SGB02N120, SGD02N120

Fast S-IGBT in NPT-technology

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V

DC collector current

TC = 25°C

TC = 100°C

IC

6.2

2.8

A
Pulsed collector current, tp limited by Tjmax ICpuls 9.6 A
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C 9.6 A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C EAS 10 mJ
Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs
Power dissipation TC = 25°C Ptot 62 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 °C

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Product Tags:

power mosfet ic

      

multi emitter transistor

      
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